Hsinchu, Taiwan

Tzung-Ting Han

USPTO Granted Patents = 39 

Average Co-Inventor Count = 2.9

ph-index = 4

Forward Citations = 38(Granted Patents)


Location History:

  • I-Ian, TW (2005)
  • I-Lan, TW (2003 - 2010)
  • Yilan, TW (2013 - 2014)
  • Yilan County, TW (2007 - 2017)
  • Hsinchu, TW (2004 - 2024)

Company Filing History:


Years Active: 2003-2025

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39 patents (USPTO):

Title: Innovations by Tzung-Ting Han: A Pioneer in Memory Device Technology

Introduction

Tzung-Ting Han is a notable inventor based in Hsinchu, Taiwan, well-known for his significant contributions to the field of memory device technology. With an impressive portfolio of 38 patents, Han has established himself as a leader in innovation, particularly within the realms of stacked memory structures and related technologies.

Latest Patents

Among Han's latest inventions are two cutting-edge patents focusing on memory devices. The first patent describes a memory device featuring a stack structure that incorporates a first set of vertical channel structures and a second set of vertical channel structures, along with a unique first slit that enhances the efficiency of the device. This design ensures that the stack structure is well-aligned with the substrate's dimensions, offering improved functionality.

The second patent outlines a memory device that consists of a substrate, a stack structure, a multitude of pads, and an additional dielectric layer. This innovation not only ensures a robust connection between the pads and the conductive layers but also features a sophisticated staircase structure that optimizes the space and performance of the memory device.

Career Highlights

Tzung-Ting Han's career is marked by his role at Macronix International Co., Ltd., where he has played a pivotal part in advancing memory technology. His dedication to research and development has led to a series of breakthroughs that have significantly influenced the industry's landscape.

Collaborations

Throughout his career, Han has collaborated with talented individuals such as Ming-Shang Chen and Yu-Fong Huang, whose combined efforts have helped push the boundaries of innovation within the company. Their teamwork exemplifies the spirit of collaboration that drives progress in the tech industry.

Conclusion

Tzung-Ting Han stands out as a remarkable inventor whose work is shaping the future of memory devices. With a wealth of patents to his name and a commitment to research, his contributions continue to inspire advancements in technology, making a lasting impact within the field.

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