The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Feb. 16, 2023
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Chen-Yu Cheng, Hsinchu City, TW;

Tzung-Ting Han, Hsinchu City, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02);
Abstract

A memory device includes a substrate and a stack structure. A lower portion of the stack structure includes a first global selection line structure and a second global selection line structure. The first global selection line structure includes a first long strip, a first short strip and a first connection part connecting the first long strip and the first short strip. The first long strip and the second strip extend in a first direction, and the first connection part extends in a second direction different from the first direction. The first long strip passes through a staircase structure area from a first memory array area extending continuously to a second memory array area. The second global selection line structure is adjacent to the first global selection line structure and is divided into two portions separated from each other by the first connection part of the first global selection line structure.


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