The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Feb. 20, 2013
Macronix International Co., Ltd., Hsinchu, TW;
Shih-Hung Chen, Jhudong Township, Hsinchu County, TW;
Hang-Ting Lue, Hsinchu, TW;
Hong-Ji Lee, Gueishan Township, Taoyuan County, TW;
Chin-Cheng Yang, Gangshan Township, Kaohsiung County, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A three-dimensional stacked IC device includes a stack of at least first, second, third and fourth contact levels at an interconnect region. Each contact level has a conductive layer and an insulation layer. First, second, third and fourth electrical conductors pass through portions of the stack of contact levels. The first, second, third and fourth electrical conductors are in electrical contact with the first, second, third and fourth conductive layers, respectively. A dielectric sidewall spacer circumferentially surrounds the second, third and fourth electrical conductors so that the second, third and fourth electrical conductors only electrically contact the respective second, third and fourth conductive layers.