The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Dec. 24, 2014
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Hong-Ji Lee, Hsinchu, TW;
Hsu-Sheng Yu, Hsinchu, TW;
Assignee:
MACRONIX International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76804 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 29/0649 (2013.01);
Abstract
Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate and a dielectric layer. The dielectric layer is located on the substrate. The dielectric layer has a plurality of openings, and side walls of the openings have concave-and-convex profile.