Fujisawa, Japan

Hisashi Kaneko

This inventor holds 70 USPTO granted patents, primarily in Semiconductor Manufacturing (CPC class H01L). Top assignees: Kabushiki Kaisha Toshiba, Ibiden Company Limited, Tokyo Electron Limited. Active years: 1993-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisashi Kaneko. Retrieved from https://idiyas.com/inventor/hisashi-kaneko

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 62.9

Average Co-Inventor Count = 4.5

ph-index = 20

Forward Citations = 1,185(Granted Patents)

Forward Citations (Not Self Cited) = 1,167(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kanagawa-ken, JP (1997 - 2008)
  • Kanagawa, JP (1995 - 2011)
  • Fujisawa, JP (1993 - 2013)

Company Filing History:


Years Active: 1993-2013

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Areas of Expertise:
Reliability Evaluation
Semiconductor Device
Plating Method
Wiring Structure
Electroplating
Manufacturing Method
Insulating Film
Thermally Treated Copper
Integrated Circuit
Eddy Current Sensor
Multi-Level Interconnection
Substrate Processing
70 patents (USPTO):Explore Patents

Title: **Innovations by Hisashi Kaneko: A Leader in Semiconductor Technologies**

Introduction

Hisashi Kaneko, based in Fujisawa, Japan, has made significant contributions to the field of semiconductor technology, holding an impressive total of 70 patents. His work primarily revolves around the reliability evaluation of semiconductor devices and methods to enhance manufacturing processes, showcasing his vital role in advancing innovation in this industry.

Latest Patents

Hisashi Kaneko's recent patents reflect his dedication to improving the performance and reliability of semiconductor devices. Notable among these are:

1. **Reliability Evaluation Test Apparatus** - This invention includes a wafer storage section that stores a wafer while ensuring complete electrical contact between the electrode pads of devices formed on the wafer and the bumps of a contactor. It features a hermetic and heat-insulating structure, along with a pressure mechanism for pressing the contactor and a heating mechanism that heats the wafer to a high temperature, enabling thorough reliability evaluations.

2. **Reliability Evaluation Test System** - This system encompasses the apparatus mentioned above and is crucial for comprehensive testing within semiconductor manufacturing environments.

3. **Contactor** - This innovation is integral to the testing apparatus, facilitating high-fidelity tests.

4. **Reliability Evaluation Test Method** - This method allows for accelerated evaluation conditions of interconnection and insulating films formed on semiconductor wafers, ensuring enhanced product performance.

5. **Method of Manufacturing a Semiconductor Device** - This patented method addresses the removal of damage layers and native oxide films within connection holes, employing a combination of dry and wet processes to optimize the semiconductor fabrication process.

Career Highlights

Hisashi Kaneko's experience with Kabushiki Kaisha Toshiba highlights his status as a prominent inventor in semiconductor technologies. His practical application of his knowledge has not only contributed to his personal achievements but also to the broader field of electronics.

Collaborations

Throughout his career, Kaneko has collaborated with notable professionals in his field, including Tetsuo Matsuda and Masahiko Hasunuma. These collaborations have aided the development of innovative technologies and methodologies, further propelling advancements in semiconductor reliability and efficiency.

Conclusion

Hisashi Kaneko is an influential inventor, whose 70 patents signify his profound impact on the semiconductor industry. His dedication to improving the reliability and manufacturing methods of semiconductor devices demonstrates a lasting commitment to innovation, serving as an inspiring figure for future inventors and researchers in this vital field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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