The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Sep. 21, 2005
Ichiro Omura, Yokohama, JP;
Kenji Takahashi, Tsukuba, JP;
Chiaki Takubo, Tokyo, JP;
Hideo Aoki, Yokohama, JP;
Hideo Numata, Yokohama, JP;
Mie Matsuo, Kamakura, JP;
Hirokazu Ezawa, Tokyo, JP;
Susumu Harada, Yokohama, JP;
Hisashi Kaneko, Fujisawa, JP;
Hiroshi Ikenoue, Hiratsuka, JP;
Kenichi Matsushita, Tokyo, JP;
Ichiro Omura, Yokohama, JP;
Kenji Takahashi, Tsukuba, JP;
Chiaki Takubo, Tokyo, JP;
Hideo Aoki, Yokohama, JP;
Hideo Numata, Yokohama, JP;
Mie Matsuo, Kamakura, JP;
Hirokazu Ezawa, Tokyo, JP;
Susumu Harada, Yokohama, JP;
Hisashi Kaneko, Fujisawa, JP;
Hiroshi Ikenoue, Hiratsuka, JP;
Kenichi Matsushita, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device which is compact and thin in size, low in resistance of a current path and parasitic inductance and excellent in reliability is provided. This semiconductor device comprises a semiconductor substrate, a first main electrode which is formed on a front surface of the semiconductor substrate, a second main electrode which is formed on a rear surface of the semiconductor substrate, and a conducting portion which is formed in a direction to pierce through the semiconductor substrate, wherein the second main electrode is extracted to the front surface of the semiconductor substrate via the conducting portion. And, the conducting portion is a through via which has a through hole formed through the semiconductor substrate in its thickness direction and a conductive portion which is formed in the through hole and connected to the second main electrode.