Hiratsuka, Japan

Hiroshi Ikenoue


Average Co-Inventor Count = 7.8

ph-index = 2

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2007-2009

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2 patents (USPTO):Explore Patents

Title: Hiroshi Ikenoue: Innovator in Semiconductor Technology

Introduction

Hiroshi Ikenoue is a prominent inventor based in Hiratsuka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on developing compact and reliable semiconductor devices that enhance performance in various applications.

Latest Patents

Ikenoue's latest patents include a semiconductor device featuring power semiconductor elements. This innovative device is designed to be compact and thin, with low resistance in the current path and minimal parasitic inductance, ensuring excellent reliability. The device comprises a semiconductor substrate, a first main electrode on the front surface, a second main electrode on the rear surface, and a conducting portion that pierces through the substrate. The conducting portion is a through via with a conductive portion connected to the second main electrode. Additionally, he has developed a method for producing semiconductor devices, which involves forming a seed film of copper on a substrate, polycrystallizing the seed film, and then creating a plated film of copper through electrolytic plating.

Career Highlights

Hiroshi Ikenoue is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the industry.

Collaborations

Ikenoue has collaborated with notable coworkers, including Hisashi Kaneko and Ichiro Omura. Their combined expertise has fostered innovation and development in semiconductor technologies.

Conclusion

Hiroshi Ikenoue's contributions to semiconductor technology through his patents and work at Toshiba highlight his role as a key innovator in the field. His advancements continue to influence the development of reliable and efficient semiconductor devices.

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