The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2007
Filed:
May. 25, 2005
Applicants:
Hiroshi Ikenoue, Hiratsuka, JP;
Hisashi Kaneko, Fujisawa, JP;
Masaaki Hatano, Yokohama, JP;
Soichi Yamashita, Kawasaki, JP;
Takashi Yoda, Machida, JP;
Makoto Sekine, Yokohama, JP;
Inventors:
Hiroshi Ikenoue, Hiratsuka, JP;
Hisashi Kaneko, Fujisawa, JP;
Masaaki Hatano, Yokohama, JP;
Soichi Yamashita, Kawasaki, JP;
Takashi Yoda, Machida, JP;
Makoto Sekine, Yokohama, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.