The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Apr. 27, 2007
Applicants:
Hideo Shinomiya, Yokohama, JP;
Jun Hirota, Yokohama, JP;
Mie Matsuo, Kamakura, JP;
Hisashi Kaneko, Fujisawa, JP;
Inventors:
Hideo Shinomiya, Yokohama, JP;
Jun Hirota, Yokohama, JP;
Mie Matsuo, Kamakura, JP;
Hisashi Kaneko, Fujisawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device includes forming a copper anti-diffusion film on a copper trench wiring layer, and forming an opening portion in the copper anti-diffusion film by laser ablation, the opening portion being formed in a region corresponding to an alignment region used for lithography process for forming an aluminum wiring on the copper trench wiring layer.