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For the Inventor, By the Inventor

Chiba, Japan

Hiroyuki Ito

This inventor holds 37 USPTO granted patents and 4 published patent applications and 1 EPO patent, primarily in Plasma Doping Techniques. Top assignees: Panasonic Corporation, Applied Materials, Inc., Matsushita Electric Industrial Co., Ltd.. Active years: 1984-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroyuki Ito. Retrieved from https://idiyas.com/inventor/hiroyuki-ito-2n2ltzr3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 37 

% Patents Active = 56.8


Average Co-Inventor Count = 3.3

ph-index = 12

Forward Citations = 348(Granted Patents)


Location History:

  • Okayama, JP (1984)
  • Igadera, Shimokaiinji, Nagaokakyo-shi, Kyoto JP (1990)
  • West Sussex, GB (1995)
  • Horsham, GB (1992 - 2000)
  • Tochigi, JP (2002)
  • Obu, JP (2003)
  • Kawasaki, JP (2004)
  • Narita, JP (2005 - 2007)
  • Chiba, JP (1997 - 2023)

Company Filing History:

goldMedal17 out of 16,454 
 
Panasonic Corporation
 patents
silverMedal11 out of 14,482 
 
Applied Materials, Inc.
 patents
bronzeMedal5 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents
4. 1 out of 25,974 
 
Sharp Kabushiki Kaisha Corporation
 patents
5. 3 out of 834,570 
Other
 patents

Years Active: 1984-2023

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Areas of Expertise:
CMOS Image Sensor
Plasma Doping
Semiconductor Device
Ion Implantation
Charge Neutralizing
Impurity Introducing
Electronic Element
Waveguide
Microwave Ion Source
Plasma Processing
Device Fabrication
Air Resistance Reduction
37 patents (USPTO):Explore Patents
1. 11830739 - Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ions (2023-11-28),
2. 8652953 - Plasma doping method with gate shutter (2014-02-18),
3. 8257501 - Plasma doping device with gate shutter (2012-09-04),
4. 8129202 - Plasma doping method and apparatus (2012-03-06),
5. 8105926 - Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region (2012-01-31),
6. 7939388 - Plasma doping method and plasma doping apparatus (2011-05-10),
7. 7871853 - Plasma doping method and apparatus employed in the same (2011-01-18),
8. 7858479 - Method and apparatus of fabricating semiconductor device (2010-12-28),
9. 7858155 - Plasma processing method and plasma processing apparatus (2010-12-28),
10. 7800165 - Semiconductor device and method for producing the same (2010-09-21),
11. 7790586 - Plasma doping method (2010-09-07),
12. 7759254 - Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device (2010-07-20),
13. 7754503 - Method for producing semiconductor device and semiconductor producing apparatus (2010-07-13),
14. 7626184 - Impurity introducing apparatus and impurity introducing method (2009-12-01),
15. 7622725 - Impurity introducing apparatus and impurity introducing method (2009-11-24),

Title: The Innovative Journey of Hiroyuki Ito

Introduction: Hiroyuki Ito is a visionary inventor hailing from Chiba, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hiroyuki Ito holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his commitment to pushing the boundaries of what is possible in the modern world.

Career Highlights: With a career spanning over two decades, Hiroyuki Ito has worked with leading tech companies and research institutions in Japan, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Hiroyuki Ito has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and creativity that has led to the development of cutting-edge technologies with real-world applications.

Conclusion: Hiroyuki Ito's relentless pursuit of innovation and his passion for creating a better future through technology make him a true pioneer in the world of inventions. His work continues to inspire the next generation of inventors and innovators to dream big and push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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