The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2010

Filed:

Nov. 13, 2007
Applicants:

Yuichiro Sasaki, Osaka, JP;

Katsumi Okashita, Osaka, JP;

Hiroyuki Ito, Chiba, JP;

Bunji Mizuno, Nara, JP;

Inventors:

Yuichiro Sasaki, Osaka, JP;

Katsumi Okashita, Osaka, JP;

Hiroyuki Ito, Chiba, JP;

Bunji Mizuno, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/265 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract

An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter.


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