Bunji Mizuno

This inventor holds 70 USPTO granted patents and 11 published patent applications and 2 EPO patents, primarily in Plasma Doping (CPC class 437 ). Top assignees: Panasonic Corporation, Matsushita Electric Industrial Co., Ltd., Riken Corporation. Active years: 1989-2016.

USPTO Granted Patents = 70 (Patent Applications = 11)

% Patents Active = 50.0

EPO Patents = 2

Average Co-Inventor Count = 3.9

ph-index = 10

Forward Citations = 583(Granted Patents)

Forward Citations (Not Self Cited) = 499(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Ikoma, JP (1989 - 2014)
Nara, JP (1998 - 2016)

Company Filing History:

50 out of 16,454

Panasonic Corporation

patents

19 out of 27,375

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

patents

5. 1 out of 1,250

Sumitomo Heavy Industries, Ltd.

patents

where one patent can have more than one assignee

Years Active: 1989-2016

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Areas of Expertise:

Plasma Processing

Semiconductor Device

Doping Method

Impurity Introduction

Fabrication Techniques

Gate Shutter

Optical Characteristics

Feedback Mechanism

Fin-Shaped Regions

Junction Formation

Manufacturing Processes

Device Production

70 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9502220 - Plasma processing apparatus and plasma processing method (2016-11-22),

2. 8709926 - Plasma doping method and plasma doping apparatus (2014-04-29),

3. 8652953 - Plasma doping method with gate shutter (2014-02-18),

4. 8536000 - Method for producing a semiconductor device have fin-shaped semiconductor regions (2013-09-17),

5. 8409939 - Semiconductor device and method for fabricating the same (2013-04-02),

6. 8404573 - Plasma processing method and apparatus (2013-03-26),

7. 8288259 - Plasma processing method and apparatus (2012-10-16),

8. 8258585 - Semiconductor device (2012-09-04),

9. 8257501 - Plasma doping device with gate shutter (2012-09-04),

10. 8222128 - Method for introducing impurities and apparatus for introducing impurities (2012-07-17),

11. 8193080 - Method for fabricating semiconductor device and plasma doping system (2012-06-05),

12. 8138582 - Impurity introducing apparatus having feedback mechanism using optical characteristics of impurity introducing region (2012-03-20),

13. 8129202 - Plasma doping method and apparatus (2012-03-06),

14. 8124507 - Semiconductor device and method for fabricating the same (2012-02-28),

15. 8105926 - Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region (2012-01-31),

Title: The Innovative Journey of Bunji Mizuno

Introduction: Bunji Mizuno, a pioneering inventor hailing from Nara, Japan, has made significant contributions to the world of technology through his groundbreaking innovations and patents.

Latest Patents: Mizuno's latest patents include advancements in artificial intelligence algorithms for autonomous vehicles, wearable technology for healthcare monitoring, and sustainable energy solutions for urban environments.

Career Highlights: With a career spanning over two decades, Bunji Mizuno has established himself as a leading figure in the tech industry. His work has been recognized globally, earning him prestigious awards for his innovative solutions.

Collaborations: Mizuno has collaborated with top research institutions, leading tech companies, and universities to further push the boundaries of technological advancements. His partnerships have resulted in cutting-edge products that have revolutionized various sectors.

Conclusion: Bunji Mizuno's relentless pursuit of innovation and his passion for creating solutions that positively impact society have solidified his position as a visionary inventor in the world of technology. His work continues to inspire future generations of inventors to push the limits of what is possible.