The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2013
Filed:
Nov. 11, 2010
Yuichiro Sasaki, Osaka, JP;
Katsumi Okashita, Osaka, JP;
Bunji Mizuno, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A method for fabricating a semiconductor device includes: forming a fin-type semiconductor region on a substrate; and introducing an n-type impurity into at least a side of the fin-type semiconductor region by a plasma doping process, thereby forming an n-type impurity region in the side of the fin-type semiconductor region. In the introducing the n-type impurity, when a source power in the plasma doping process is denoted by a character Y [W], the supply of a gas containing the n-type impurity per unit time and per unit volume is set greater than or equal to 5.1×10/((1.7/2)×(Y/500)) [mol/(min·L·sec)], and the supply of a diluent gas per unit time and per unit volume is set greater than or equal to 1.7×10/((20/2)×(Y/500)) [mol/(min·L·sec)].