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For the Inventor, By the Inventor

Osaka, Japan

Katsumi Okashita

This inventor holds 29 USPTO granted patents and 6 published patent applications and 2 EPO patents, primarily in Plasma Doping Technology. Top assignees: Panasonic Corporation, Matsushita Electric Industrial Co., Ltd.. Active years: 2008-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Katsumi Okashita. Retrieved from https://idiyas.com/inventor/katsumi-okashita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 29 

% Patents Active = 51.7


Average Co-Inventor Count = 4.8

ph-index = 7

Forward Citations = 136(Granted Patents)


Location History:

  • Tokyo, JP (2008 - 2010)
  • Osaka, JP (2008 - 2014)

Company Filing History:

goldMedal26 out of 16,454 
 
Panasonic Corporation
 patents
silverMedal3 out of 27,375 
 
Matsushita Electric Industrial Co., Ltd.
 patents

Years Active: 2008-2014

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Areas of Expertise:
Plasma Doping
Semiconductor Fabrication
Gate Shutter
Fin-Shaped Regions
Impurity Introduction
Plasma Processing
Doping Methods
Semiconductor Devices
Manufacturing Techniques
Plasma Processing Apparatus
Device Production
29 patents (USPTO):Explore Patents
1. 8652953 - Plasma doping method with gate shutter (2014-02-18),
2. 8536000 - Method for producing a semiconductor device have fin-shaped semiconductor regions (2013-09-17),
3. 8409939 - Semiconductor device and method for fabricating the same (2013-04-02),
4. 8258585 - Semiconductor device (2012-09-04),
5. 8257501 - Plasma doping device with gate shutter (2012-09-04),
6. 8193080 - Method for fabricating semiconductor device and plasma doping system (2012-06-05),
7. 8129202 - Plasma doping method and apparatus (2012-03-06),
8. 8124507 - Semiconductor device and method for fabricating the same (2012-02-28),
9. 8105926 - Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region (2012-01-31),
10. 8063437 - Semiconductor device and method for producing the same (2011-11-22),
11. 8030187 - Method for manufacturing semiconductor device (2011-10-04),
12. 8012862 - Method for manufacturing semiconductor device using plasma doping (2011-09-06),
13. 8004045 - Semiconductor device and method for producing the same (2011-08-23),
14. 7972945 - Plasma doping apparatus and method, and method for manufacturing semiconductor device (2011-07-05),
15. 7939388 - Plasma doping method and plasma doping apparatus (2011-05-10),

Title: The Innovative Mind of Katsumi Okashita

Introduction: Katsumi Okashita is a renowned inventor hailing from Osaka, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Katsumi Okashita holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: Throughout his illustrious career, Katsumi Okashita has worked with leading tech companies to develop cutting-edge solutions that have revolutionized various industries. His passion for pushing the boundaries of what is possible has led to numerous successful inventions that have had a lasting impact.

Collaborations: Katsumi Okashita has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and creativity that has resulted in groundbreaking inventions. His ability to work effectively in multidisciplinary teams has been instrumental in his success as an inventor.

Conclusion: Katsumi Okashita's dedication to innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor. His contributions to the world of technology continue to inspire future generations of inventors and shape the landscape of innovation for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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