The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Aug. 19, 2008
Yuichiro Sasaki, Osaka, JP;
Katsumi Okashita, Osaka, JP;
Keiichi Nakamoto, Osaka, JP;
Hisataka Kanada, Osaka, JP;
Bunji Mizuno, Nara, JP;
Yuichiro Sasaki, Osaka, JP;
Katsumi Okashita, Osaka, JP;
Keiichi Nakamoto, Osaka, JP;
Hisataka Kanada, Osaka, JP;
Bunji Mizuno, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r' of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.