The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2011

Filed:

Oct. 04, 2007
Applicants:

Tomohiro Okumura, Osaka, JP;

Hisao Nagai, Osaka, JP;

Yuichiro Sasaki, Osaka, JP;

Katsumi Okashita, Osaka, JP;

Hiroyuki Ito, Chiba, JP;

Bunji Mizuno, Nara, JP;

Inventors:

Tomohiro Okumura, Osaka, JP;

Hisao Nagai, Osaka, JP;

Yuichiro Sasaki, Osaka, JP;

Katsumi Okashita, Osaka, JP;

Hiroyuki Ito, Chiba, JP;

Bunji Mizuno, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/42 (2006.01);
U.S. Cl.
CPC ...
Abstract

Before a plasma doping process is performed, there is generated a plasma of a gas containing an element belonging to the same group in the periodic table as the primary element of a silicon substrate, e.g., a monosilane gas, in a vacuum chamber. Thus, the inner wall of the vacuum chamberis covered with a silicon-containing film. Then, a plasma doping process is performed on the silicon substrate


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