The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2011
Filed:
Jul. 30, 2009
Yuichiro Sasaki, Osaka, JP;
Keiichi Nakamoto, Osaka, JP;
Katsumi Okashita, Osaka, JP;
Hisataka Kanada, Osaka, JP;
Bunji Mizuno, Nara, JP;
Yuichiro Sasaki, Osaka, JP;
Keiichi Nakamoto, Osaka, JP;
Katsumi Okashita, Osaka, JP;
Hisataka Kanada, Osaka, JP;
Bunji Mizuno, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r' of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature rof the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2×r. The radius of curvature r′ of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature rof the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2×r
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile