The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jul. 27, 2012
Tomohiro Okumura, Osaka, JP;
Yuichiro Sasaki, Tokyo, JP;
Katsumi Okashita, Osaka, JP;
Bunji Mizuno, Nara, JP;
Hiroyuki Ito, Chiba, JP;
Ichiro Nakayama, Osaka, JP;
Cheng-guo Jin, Osaka, JP;
Tomohiro Okumura, Osaka, JP;
Yuichiro Sasaki, Tokyo, JP;
Katsumi Okashita, Osaka, JP;
Bunji Mizuno, Nara, JP;
Hiroyuki Ito, Chiba, JP;
Ichiro Nakayama, Osaka, JP;
Cheng-Guo Jin, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.