The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2012

Filed:

Dec. 28, 2009
Applicants:

Tomohiro Okumura, Osaka, JP;

Yuichiro Sasaki, Tokyo, JP;

Katsumi Okashita, Osaka, JP;

Hiroyuki Ito, Chiba, JP;

Bunji Mizuno, Nara, JP;

Cheng-guo Jin, Osaka, JP;

Ichiro Nakayama, Osaka, JP;

Inventors:

Tomohiro Okumura, Osaka, JP;

Yuichiro Sasaki, Tokyo, JP;

Katsumi Okashita, Osaka, JP;

Hiroyuki Ito, Chiba, JP;

Bunji Mizuno, Nara, JP;

Cheng-Guo Jin, Osaka, JP;

Ichiro Nakayama, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. A prescribed gas is introduced into a vacuum containerfrom a gas supply apparatuswhile being exhausted by a turbomolecular pumpas an exhaust apparatus. The pressure in the vacuum containeris kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power sourceto a coildisposed close to a dielectric windowwhich is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. A high-frequency power sourcefor supplying high-frequency electric power to the sample electrodeis provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.


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