The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2012
Filed:
Mar. 26, 2010
Applicants:
Yuichiro Sasaki, Osaka, JP;
Katsumi Okashita, Osaka, JP;
Bunji Mizuno, Nara, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/42 (2006.01);
U.S. Cl.
CPC ...
Abstract
An impurity is introduced into a fin-type semiconductor region () formed on a substrate () using a plasma doping process, thereby forming an impurity-introduced layer (). Carbon is introduced into the fin-type semiconductor region () using a plasma doping process to overlap at least a part of the impurity-introduced layer (), thereby forming a carbon-introduced layer.