The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Apr. 30, 2009
Yuichiro Sasaki, Osaka, JP;
Katsumi Okashita, Osaka, JP;
Keiichi Nakamoto, Osaka, JP;
Bunji Mizuno, Nara, JP;
Yuichiro Sasaki, Osaka, JP;
Katsumi Okashita, Osaka, JP;
Keiichi Nakamoto, Osaka, JP;
Bunji Mizuno, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes: a fin-type semiconductor region () formed on a substrate (); a gate insulating film () formed so as to cover an upper surface and both side surfaces of a predetermined portion of the fin-type semiconductor region (); a gate electrode () formed on the gate insulating film (); and an impurity region () formed on both sides of the gate electrode () in the fin-type semiconductor region (). An impurity blocking portion () for blocking the introduction of impurities is provided adjacent both sides of the gate electrode () over an upper surface of the fin-type semiconductor region ().