The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Mar. 04, 2010
Applicants:
Yuichiro Sasaki, Osaka, JP;
Katsumi Okashita, Osaka, JP;
Bunji Mizuno, Nara, JP;
Inventors:
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/223 (2006.01);
U.S. Cl.
CPC ...
Abstract
A fin-type semiconductor region () is formed on a substrate (), and then a resist pattern () is formed on the substrate (). An impurity is implanted into the fin-type semiconductor region () by a plasma doping process using the resist pattern () as a mask, and then at least a side of the fin-type semiconductor region () is covered with a protective film (). Thereafter, the resist pattern () is removed by cleaning using a chemical solution, and then the impurity implanted into the fin-type semiconductor region () is activated by heat treatment.