The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Oct. 02, 2008
Katsumi Okashita, Osaka, JP;
Yuichiro Sasaki, Osaka, JP;
Keiichi Nakamoto, Osaka, JP;
Bunji Mizuno, Nara, JP;
Katsumi Okashita, Osaka, JP;
Yuichiro Sasaki, Osaka, JP;
Keiichi Nakamoto, Osaka, JP;
Bunji Mizuno, Nara, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A fin-shaped semiconductor region is formed on a substrate, and then the substrate is placed in a chamber. Then, an ignition gas is introduced into a chamber to thereby turn the ignition gas into a plasma, and then a process gas containing an impurity is introduced into the chamber to thereby turn the process gas into a plasma. Then, a bias voltage is applied to the substrate so as to dope the semiconductor region with the impurity after confirming attenuation of an amount of the ignition gas remaining in the chamber.