Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Riken Corporation

Panasonic Intellectual Property Management Co., Ltd.

Sumitomo Heavy Industries, Ltd.

Panaosnic Corporation

Bunji Mizuno

Yuichiro Sasaki

Katsumi Okashita

Ichiro Nakayama

Tomohiro Okumura

Hiroyuki Ito

Cheng-Guo Jin

Keiichi Nakamoto

Satoshi Maeshima

Hisataka Kanada

Michihiko Takase

Masafumi Kubota

Takeshi Katayama

Hiroaki Nakaoka

Tamaki Watanabe

Takeo Kawaguchi

Kenji Okada

Masuo Tanno

Ichirou Nakayama

Shogo Okita

Shinichi Watanabe

Hideki Tamura

Shinichi Yamamoto

Masatoshi Arai

Koji Eriguchi

Shuichi Kameyama

Toshio Kudo

Hisao Nagai

Norisato Shimizu

Junichi Onoue

Masayuki Kase

Toru Fukumoto

Tokihiro Ikeda

Shin-ichi Watanabe

Kichiji Hatanaka

Masabumi Kubota

Yu-ichiro Sasaki

Noriyuki Sakudo

T c/o Matsushita Electric Indus Co Ltd Okumura

A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes: a process chamber; a plasma excitation device that generates plasma; a stage in the chamber; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and has a window section through which the substrate is partly exposed to plasma; and a movement device that moves a relative position of the cover to the frame. The cover has a roof section, a cylindrical circumferential side section extending from a circumferential edge of the roof section toward the stage, and a correction member that protrudes from the roof section and/or the circumferential side section toward the frame and presses the frame onto the stage to correct warpage of the frame.

Plasma processing apparatus and plasma processing method

In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended.

Plasma doping method and plasma doping apparatus

In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

Plasma doping method with gate shutter

First and second gate insulating films are formed so as to cover at least the upper corner of first and second fin-shaped semiconductor regions. The radius of curvature r' of the upper corner of the first fin-shaped semiconductor region located outside the first gate insulating film is greater than the radius of curvature rof the upper corner of the first fin-shaped semiconductor region located under the first gate insulating film and is less than or equal to 2&#xd7;r. The radius of curvature r&#x2032; of the upper corner of the second fin-shaped semiconductor region located outside the second gate insulating film is greater than the radius of curvature rof the upper corner of the second fin-shaped semiconductor region located under the second gate insulating film and is less than or equal to 2&#xd7;r

Method for producing a semiconductor device have fin-shaped semiconductor regions

A method for fabricating a semiconductor device includes: forming a fin-type semiconductor region on a substrate; and introducing an n-type impurity into at least a side of the fin-type semiconductor region by a plasma doping process, thereby forming an n-type impurity region in the side of the fin-type semiconductor region. In the introducing the n-type impurity, when a source power in the plasma doping process is denoted by a character Y [W], the supply of a gas containing the n-type impurity per unit time and per unit volume is set greater than or equal to 5.1&#xd7;10/((1.7/2)&#xd7;(Y/500)) [mol/(min&#xb7;L&#xb7;sec)], and the supply of a diluent gas per unit time and per unit volume is set greater than or equal to 1.7&#xd7;10/((20/2)&#xd7;(Y/500)) [mol/(min&#xb7;L&#xb7;sec)].

Semiconductor device and method for fabricating the same

With the evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.

Plasma processing method and apparatus

In a plasma doping device according to the invention, a vacuum chamber () is evacuated with a turbo-molecular pump () as an exhaust device via a exhaust portwhile a predetermined gas is being introduced from a gas supply device () in order to maintain the inside of the vacuum chamber () to a predetermined pressure with a pressure regulating valve (). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source () to a coil () provided in the vicinity of a dielectric window () opposed to a sample electrode () to generate inductive-coupling plasma in the vacuum chamber (). A high-frequency power source () for supplying a high-frequency power to the sample electrode () is provided. Uniformity of processing is enhanced by driving a gate shutter () and covering a through gate ().

Plasma doping device with gate shutter

A semiconductor device includes: a fin-type semiconductor region () formed on a substrate (); a gate insulating film () formed so as to cover an upper surface and both side surfaces of a predetermined portion of the fin-type semiconductor region (); a gate electrode () formed on the gate insulating film (); and an impurity region () formed on both sides of the gate electrode () in the fin-type semiconductor region (). An impurity blocking portion () for blocking the introduction of impurities is provided adjacent both sides of the gate electrode () over an upper surface of the fin-type semiconductor region ().

Semiconductor device

A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Method for introducing impurities and apparatus for introducing impurities

An impurity is introduced into a fin-type semiconductor region () formed on a substrate () using a plasma doping process, thereby forming an impurity-introduced layer (). Carbon is introduced into the fin-type semiconductor region () using a plasma doping process to overlap at least a part of the impurity-introduced layer (), thereby forming a carbon-introduced layer.

Method for fabricating semiconductor device and plasma doping system

An impurity doping system is disclosed, which includes an impurity doping device for doping an impurity into a surface of a solid state base body, a measuring device for measuring an optical characteristic of an area into which the impurity is doped, and an annealing device for annealing the area into which the impurity is doped. The impurity doping system realizes an impurity doping not to bring about a rise of a substrate temperature, and measures optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized.

Impurity introducing apparatus having feedback mechanism using optical characteristics of impurity introducing region

It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. A prescribed gas is introduced into a vacuum containerfrom a gas supply apparatuswhile being exhausted by a turbomolecular pumpas an exhaust apparatus. The pressure in the vacuum containeris kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power sourceto a coildisposed close to a dielectric windowwhich is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. A high-frequency power sourcefor supplying high-frequency electric power to the sample electrodeis provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

Plasma doping method and apparatus

A fin-type semiconductor region () is formed on a substrate (), and then a resist pattern () is formed on the substrate (). An impurity is implanted into the fin-type semiconductor region () by a plasma doping process using the resist pattern () as a mask, and then at least a side of the fin-type semiconductor region () is covered with a protective film (). Thereafter, the resist pattern () is removed by cleaning using a chemical solution, and then the impurity implanted into the fin-type semiconductor region () is activated by heat treatment.

A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.

Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region

Growing community of inventors

Nara, Japan

Bunji Mizuno