The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Nov. 23, 2010
Tomohiro Okumura, Kadoma, JP;
Ichiro Nakayama, Kadoma, JP;
Bunji Mizuno, Ikoma, JP;
Yuichiro Sasaki, Kawasaki, JP;
Tomohiro Okumura, Kadoma, JP;
Ichiro Nakayama, Kadoma, JP;
Bunji Mizuno, Ikoma, JP;
Yuichiro Sasaki, Kawasaki, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended.