The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2009
Filed:
Mar. 27, 2008
Bunji Mizuno, Nara, JP;
Ichiro Nakayama, Osaka, JP;
Yuichiro Sasaki, Tokyo, JP;
Tomohiro Okumura, Osaka, JP;
Cheng-guo Jin, Osaka, JP;
Hiroyuki Ito, Chiba, JP;
Bunji Mizuno, Nara, JP;
Ichiro Nakayama, Osaka, JP;
Yuichiro Sasaki, Tokyo, JP;
Tomohiro Okumura, Osaka, JP;
Cheng-Guo Jin, Osaka, JP;
Hiroyuki Ito, Chiba, JP;
Panasonic Corporation, Osaka, JP;
Abstract
It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.