The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2010

Filed:

Aug. 25, 2004
Applicants:

Yuichiro Sasaki, Tokyo, JP;

Katsumi Okashita, Tokyo, JP;

Bunji Mizuno, Nara, JP;

Hiroyuki Ito, Chiba, JP;

Cheng-guo Jin, Kanagawa, JP;

Hideki Tamura, Kanagawa, JP;

Ichiro Nakayama, Osaka, JP;

Tomohiro Okumura, Osaka, JP;

Satoshi Maeshima, Hyogo, JP;

Inventors:

Yuichiro Sasaki, Tokyo, JP;

Katsumi Okashita, Tokyo, JP;

Bunji Mizuno, Nara, JP;

Hiroyuki Ito, Chiba, JP;

Cheng-Guo Jin, Kanagawa, JP;

Hideki Tamura, Kanagawa, JP;

Ichiro Nakayama, Osaka, JP;

Tomohiro Okumura, Osaka, JP;

Satoshi Maeshima, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S), a step of removing a resist (S), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S); a step of anneal (S). The step of removing a resist (S) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NHOH, HOand HO into contact with the resist. The step of cleaning (S) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NHOH, HOand HO into contact with the principal face of the solid substrate. The step of removing a resist (S) and the step of cleaning (S) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NHOH, HOand HO into contact with the principal face of the solid substrate.


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