The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2010

Filed:

May. 12, 2005
Applicants:

Bunji Mizuno, Nara, JP;

Yuichiro Sasaki, Tokyo, JP;

Ichiro Nakayama, Osaka, JP;

Hiroyuki Ito, Chiba, JP;

Tomohiro Okumura, Osaka, JP;

Cheng-guo Jin, Osaka, JP;

Katsumi Okashita, Tokyo, JP;

Hisataka Kanada, Osaka, JP;

Inventors:

Bunji Mizuno, Nara, JP;

Yuichiro Sasaki, Tokyo, JP;

Ichiro Nakayama, Osaka, JP;

Hiroyuki Ito, Chiba, JP;

Tomohiro Okumura, Osaka, JP;

Cheng-Guo Jin, Osaka, JP;

Katsumi Okashita, Tokyo, JP;

Hisataka Kanada, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.


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