The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Oct. 07, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Hans-Joachim L. Gossmann, Summit, NJ (US);
Stanislav S. Todorov, Topsfield, MA (US);
Hiroyuki Ito, Chiba, JP;
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26593 (2013.01); H01L 27/14601 (2013.01); H01L 27/14643 (2013.01);
Abstract
Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than −50° C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.