The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 28, 2010

Filed:

Oct. 27, 2005
Applicants:

Tomohiro Okumura, Osaka, JP;

Yuichiro Sasaki, Tokyo, JP;

Katsumi Okashita, Tokyo, JP;

Cheng-guo Jin, Osaka, JP;

Satoshi Maeshima, Hyogo, JP;

Hiroyuki Ito, Chiba, JP;

Ichiro Nakayama, Osaka, JP;

Bunji Mizuno, Nara, JP;

Inventors:

Tomohiro Okumura, Osaka, JP;

Yuichiro Sasaki, Tokyo, JP;

Katsumi Okashita, Tokyo, JP;

Cheng-Guo Jin, Osaka, JP;

Satoshi Maeshima, Hyogo, JP;

Hiroyuki Ito, Chiba, JP;

Ichiro Nakayama, Osaka, JP;

Bunji Mizuno, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61N 5/00 (2006.01); G21G 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum containerfrom a gas supply apparatusthrough a gas inletwhile being exhausted by a turbomolecular pumpas an exhaust apparatus through an exhaust hole. The pressure in the vacuum containeris kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power sourceto a coildisposed close to a dielectric windowwhich is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. A high-frequency power sourcefor supplying high-frequency electric power to the sample electrodeis provided and functions as a voltage source for controlling the potential of the sample electrode. A surface crystal layer of a silicon waferwas rendered amorphous successfully by improving the structure of the sample-electrode


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