Panasonic Corporation

Applied Materials, Inc.

Matsushita Electric Industrial Co., Ltd.

Other

Sharp Kabushiki Kaisha Corporation

Panaosnic Corporation

Hiroyuki Ito

Bunji Mizuno

Yuichiro Sasaki

Katsumi Okashita

Tomohiro Okumura

Ichiro Nakayama

Cheng-Guo Jin

Satoshi Maeshima

Keiichi Nakamoto

Stephen Moffatt

Yasuhiko Matsunaga

Osamu Nakamura

Hiroji Hanawa

Hideki Tamura

Keiichi Hibi

Jonathan Gerald England

Hans-Joachim Ludwig Gossmann

Takashi Ichiyanagi

Xue-Yu Qian

Hirotaka Nakano

Hisao Nagai

Stanislav S Todorov

Kiyokazu Imanishi

Hisataka Kanada

Noritaka Koizumi

Tsuneaki Iwano

Robert J Mitchell

Frederick G Plumb

Hideki Minami

David Richard Burgin

Craig J Lowrie

Nicholas J Bright

Masahiro Tatsumi

Hiroshi Asechi

Haruhiko Kitagawa

Kengo Hara

Yoshitaka Uemura

Hisato Takahashi

Katsuhiro Tsuchida

Noriyuki Sakudo

Timothy G Morgan

Ian Fotheringham

Junji Matsuda

Katsuji Kawanishi

T c/o Matsushita Electric Indus Co Ltd Okumura

Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than &#x2212;50&#xb0; C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.

Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ions

In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

Plasma doping method with gate shutter

In a plasma doping device according to the invention, a vacuum chamber () is evacuated with a turbo-molecular pump () as an exhaust device via a exhaust portwhile a predetermined gas is being introduced from a gas supply device () in order to maintain the inside of the vacuum chamber () to a predetermined pressure with a pressure regulating valve (). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source () to a coil () provided in the vicinity of a dielectric window () opposed to a sample electrode () to generate inductive-coupling plasma in the vacuum chamber (). A high-frequency power source () for supplying a high-frequency power to the sample electrode () is provided. Uniformity of processing is enhanced by driving a gate shutter () and covering a through gate ().

Plasma doping device with gate shutter

It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. A prescribed gas is introduced into a vacuum containerfrom a gas supply apparatuswhile being exhausted by a turbomolecular pumpas an exhaust apparatus. The pressure in the vacuum containeris kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power sourceto a coildisposed close to a dielectric windowwhich is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. A high-frequency power sourcefor supplying high-frequency electric power to the sample electrodeis provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

Plasma doping method and apparatus

A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.

Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region

Before a plasma doping process is performed, there is generated a plasma of a gas containing an element belonging to the same group in the periodic table as the primary element of a silicon substrate, e.g., a monosilane gas, in a vacuum chamber. Thus, the inner wall of the vacuum chamberis covered with a silicon-containing film. Then, a plasma doping process is performed on the silicon substrate

Plasma doping method and plasma doping apparatus

A plasma doping method and a plasma doping apparatus, having a superior in-plane uniformity of an amorphous layer formed on a sample surface, are provided. In the plasma doping method by which plasma is generated within a vacuum chamber, and impurity ions contained in the plasma are caused to collide with the surface of the sample so as to quality-change the surface of the sample into an amorphous state thereof, a plasma irradiation time is adjusted in order to improve an in-plane uniformity. If the plasma irradiation time becomes excessively short, then a fluctuation of the plasma is transferred to depths of an amorphous layer formed on a silicon substrate, so that the in-plane uniformity is deteriorated. On the other hand, if the irradiation time becomes excessively long, then an effect for sputtering the surface of the silicon substrate by using the plasma becomes dominant, then the in-plane uniformity is deteriorated. While a proper plasma irradiation time present in an intermediate time between the long plasma irradiation time and the short plasma irradiation time is found out, during which the in-plane uniformity becomes better, a plasma doping process is carried out within the intermediate time.

Plasma doping method and apparatus employed in the same

An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

Method and apparatus of fabricating semiconductor device

It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum containerfrom a gas supply apparatusthrough a gas inletwhile being exhausted by a turbomolecular pumpas an exhaust apparatus through an exhaust hole. The pressure in the vacuum containeris kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power sourceto a coildisposed close to a dielectric windowwhich is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. A high-frequency power sourcefor supplying high-frequency electric power to the sample electrodeis provided and functions as a voltage source for controlling the potential of the sample electrode. A surface crystal layer of a silicon waferwas rendered amorphous successfully by improving the structure of the sample-electrode

Plasma processing method and plasma processing apparatus

Semiconductor device and method for producing the same

An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter.

Plasma doping method

A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S), a step of removing a resist (S), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S); a step of anneal (S). The step of removing a resist (S) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NHOH, HOand HO into contact with the resist. The step of cleaning (S) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NHOH, HOand HO into contact with the principal face of the solid substrate. The step of removing a resist (S) and the step of cleaning (S) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NHOH, HOand HO into contact with the principal face of the solid substrate.

Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device

A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber.

Method for producing semiconductor device and semiconductor producing apparatus

It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

Impurity introducing apparatus and impurity introducing method

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Chiba, Japan

Hiroyuki Ito