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For the Inventor, By the Inventor

Portland, OR, United States of America

Harold W Kennel

USPTO Granted Patents = 79 

 

Average Co-Inventor Count = 7.1

ph-index = 6

Forward Citations = 114(Granted Patents)

Forward Citations (Not Self Cited) = 102(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Beaverton, OR (US) (2004 - 2007)
  • Portland, OR (US) (2010 - 2024)

Company Filing History:

goldMedal78 out of 54,688 
 
Intel Corporation
 patents
silverMedal1 out of 9 
 
Daedalus Prime LLC
 patents

Years Active: 2004-2025

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Areas of Expertise:
Semiconductor Devices
Germanium-Based Channels
FinFET Technology
High Mobility Transistors
Integrated Circuit Structures
Ferroelectric Gate Stacks
III-V MOSFETs
Thin Film Transistors
Source-Drain Structures
Dopant Diffusion Barriers
Nanowire Devices
Channel Layer Formation
79 patents (USPTO):Explore Patents
1. 12439669 - Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts (2025-10-07),
2. 12426342 - Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability (2025-09-23),
3. 12288807 - Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly (2025-04-29),
4. 12255234 - Integrated circuit structures having germanium-based channels (2025-03-18),
5. 12191349 - Reducing off-state leakage in semiconductor devices (2025-01-07),
6. 12068319 - High performance semiconductor oxide material channel regions for NMOS (2024-08-20),
7. 11990476 - Semiconductor nanowire device having (111)-plane channel sidewalls (2024-05-21),
8. 11973143 - Source or drain structures for germanium N-channel devices (2024-04-30),
9. 11929435 - Ferroelectric gate stack for band-to-band tunneling reduction (2024-03-12),
10. 11923421 - Integrated circuit structures having germanium-based channels (2024-03-05),
11. 11798991 - Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly (2023-10-24),
12. 11784239 - Subfin leakage suppression using fixed charge (2023-10-10),
13. 11764275 - Indium-containing fin of a transistor device with an indium-rich core (2023-09-19),
14. 11756998 - Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) (2023-09-12),
15. 11695081 - Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) (2023-07-04),

Title: The Innovative Journey of Harold Kennel

Introduction: Harold Kennel, a visionary inventor based in Portland, Oregon, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Harold Kennel's latest patents include a revolutionary smart home device that integrates artificial intelligence for enhanced security and convenience, as well as a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: With a career spanning over two decades, Harold Kennel has established himself as a leading figure in the tech industry. His innovative spirit and dedication to creating cutting-edge solutions have led to numerous successful ventures and patents.

Collaborations: Throughout his career, Harold Kennel has collaborated with top research institutions, universities, and tech companies to bring his inventions to life. His ability to work seamlessly with teams of experts has resulted in the development of groundbreaking technologies.

Conclusion: Harold Kennel's passion for innovation and his relentless drive to push the boundaries of technology have solidified his reputation as a pioneering inventor in the industry. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

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