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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11798991 B1

PDFFull Text
Date of Patent:
Oct. 24, 2023

Filed:

Jun. 28, 2019

Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Aaron Lilak, Beaverton, OR (US);

Rishabh Mehandru, Portland, OR (US);

Willy Rachmady, Beaverton, OR (US);

Harold Kennel, Portland, OR (US);

Tahir Ghani, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Schwabe, Williamson & Wyatt, P.C.

Primary Examiner:

Dzung Tran

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/02356 (2013.01); H01L 21/02592 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01);
Abstract

A device is disclosed. The device includes a channel, a first source-drain region adjacent a first portion of the channel, the first source-drain region including a first crystalline portion that includes a first region of metastable dopants, a second source-drain region adjacent a second portion of the channel, the second source-drain region including a second crystalline portion that includes a second region of metastable dopants. A gate conductor is on the channel.

Find Patent Forward Citations

Quick Actions:

Lilak, Aaron. (2023). Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly (U.S. Patent No. 11798991). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11798991

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