The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Sep. 25, 2018
Intel Corporation, Santa Clara, CA (US);
Gilbert Dewey, Beaverton, OR (US);
Willy Rachmady, Beaverton, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Cheng-Ying Huang, Portland, OR (US);
Matthew V. Metz, Portland, OR (US);
Sean T. Ma, Portland, OR (US);
Harold Kennel, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Abhishek A. Sharma, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques are disclosed for integrating semiconductor oxide materials as alternate channel materials for n-channel devices in integrated circuits. The semiconductor oxide material may have a wider band gap than the band gap of silicon. Additionally or alternatively, the high mobility, wide band gap semiconductor oxide material may have a higher electron mobility than silicon. The use of such semiconductor oxide materials can provide improved NMOS channel performance in the form of less off-state leakage and, in some instances, improved electron mobility as compared to silicon NMOS channels.