The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Dec. 15, 2017
Intel Corporation, Santa Clara, CA (US);
Dipanjan Basu, Hillsboro, OR (US);
Cory E. Weber, Hillsboro, OR (US);
Justin R. Weber, Portland, OR (US);
Sean T. Ma, Portland, OR (US);
Harold W. Kennel, Portland, OR (US);
Seung Hoon Sung, Portland, OR (US);
Glenn A. Glass, Portland, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Tahir Ghani, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Material systems for source region, drain region, and a semiconductor body of transistor devices in which the semiconductor body is electrically insulated from an underlying substrate are selected to reduce or eliminate a band to band tunneling ('BTBT') effect between different energetic bands of the semiconductor body and one or both of the source region and the drain region. This can be accomplished by selecting a material for the semiconductor body with a band gap that is larger than a band gap for material(s) selected for the source region and/or drain region.