IDiyas

For the Inventor, By the Inventor

Meridian, ID, United States of America

Guangjun Yang

USPTO Granted Patents = 22 

Average Co-Inventor Count = 1.7

ph-index = 3

Forward Citations = 36(Granted Patents)


Location History:

  • Boise, ID (US) (2020)
  • Meridian, ID (US) (2015 - 2023)

Company Filing History:

goldMedal20 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal1 out of 2,305 
 
Nan Ya Technology Corporation
 patents
bronzeMedal1 out of 832,680 
Other
 patents

Years Active: 2015-2025

Loading Chart...
22 patents (USPTO):
1. 12363888 - Memory circuitry and method used in forming memory circuitry (2025-07-15),
2. 11785762 - Memory circuitry and method used in forming memory circuitry (2023-10-10),
3. 11563008 - Integrated memory with redistribution of capacitor connections, and methods of forming integrated memory (2023-01-24),
4. 11502085 - Integrated memory with redistribution of capacitor connections, and methods of forming integrated memory (2022-11-15),
5. 11476255 - Method used in forming an array of vertical transistors and method used in forming an array of memory cells individually comprising a vertical transistor and a storage device above the vertical transistor (2022-10-18),
6. 11393688 - Semiconductor contact formation (2022-07-19),
7. 11239242 - Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies (2022-02-01),
8. 11239240 - Methods of forming a semiconductor device (2022-02-01),
9. 10978295 - Epitaxial growth on semiconductor structures (2021-04-13),
10. 10957549 - Methods of forming semiconductor devices using mask materials, and related semiconductor devices and systems (2021-03-23),
11. 10790185 - Methods of sealing openings, and methods of forming integrated assemblies (2020-09-29),
12. 10707215 - Methods of forming semiconductor devices, and related semiconductor devices, memory devices, and electronic systems (2020-07-07),
13. 10700073 - Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies (2020-06-30),
14. 10665665 - Passivation material for a pillar adjacent a trench (2020-05-26),
15. 10546862 - Integrated assemblies having spacers of low permittivity along digit-lines, and methods of forming integrated assemblies (2020-01-28),

Title: Inventor Guangjun Yang: Revolutionizing Technology in Meridian

Introduction: Guangjun Yang, a visionary inventor based in Meridian, ID, is making waves in the tech industry with his groundbreaking innovations and patents.

Latest Patents: Yang's recent patents include cutting-edge technologies in artificial intelligence, renewable energy, and sustainable agriculture, showcasing his diverse range of expertise and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Yang has worked with top research institutions and leading tech companies to develop innovative solutions that have had a significant impact on various sectors. His contributions to the field of technology have earned him recognition as a pioneer in his field.

Collaborations: Yang has collaborated with renowned inventors, scientists, and engineers from around the world, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have led to the development of transformative technologies that are shaping the future of industries globally.

Conclusion: Guangjun Yang's passion for innovation, coupled with his relentless drive to push the boundaries of technology, continues to inspire the next generation of inventors and entrepreneurs. His dedication to creating a sustainable and tech-driven future solidifies his position as a trailblazer in the world of inventions.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…