The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Jun. 19, 2019
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Guangjun Yang, Meridian, ID (US);
Nicholas R. Tapias, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/105 (2006.01); H01L 27/22 (2006.01); H01L 21/02 (2006.01); G11C 5/06 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); G11C 5/063 (2013.01); H01L 27/105 (2013.01); H01L 27/222 (2013.01); H01L 27/24 (2013.01);
Abstract
Systems, apparatuses, and methods related to epitaxial growth on semiconductor structures are described. An apparatus may include a working surface of a substrate material and a storage node connected to an active area of an access device on the working surface. The apparatus may also include a material epitaxially grown over the storage node contact to enclose a non-solid space between the storage node contact and passing sense lines.