The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Oct. 08, 2018
Micron Technology, Inc., Boise, ID (US);
Guangjun Yang, Meridian, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming a semiconductor device comprises patterning a mask material adjacent to an array of transistors, forming an electrically conductive material between adjacent portions of the patterned mask material, forming an additional mask material over the patterned mask material to form a mask structure, the additional mask material having an arcuate cross-sectional shape, removing a portion of the additional mask material to reduce a spacing between adjacent portions of the additional mask material, and forming capacitor structures in openings between the mask structure. Additional methods of forming a semiconductor device, and related semiconductor devices and related systems are also disclosed.