Method used in forming an array of vertical transistors and method used in forming an array of memory cells individually comprising a vertical transistor and a storage device above the vertical transistor

Abstract

A method used in forming an array of vertical transistors comprises forming pillars individually comprising an upper source/drain region, a channel region vertically below the upper source/drain region, and sacrificial material above the upper source/drain region. Intervening material is about the sacrificial material of individual of the pillars. The intervening material and the sacrificial material comprise different compositions relative one another. Horizontally-elongated and spaced conductive gate lines are formed individually operatively aside the channel region of the individual pillars. The sacrificial material is removed to expose the upper source/drain region of the individual pillars and thereby form an opening in the intervening material directly above the upper source/drain region of the individual pillars. Metal material is formed in individual of the openings directly against the upper source/drain region of the individual pillars and atop the intervening material laterally outside of the openings. The metal material that is atop the intervening material interconnects the metal material that is in the individual openings. The metal material is removed back to have an uppermost surface that is no higher than an uppermost surface of the intervening material and to disconnect it from interconnecting the metal material that is in the individual openings and thereby form a laterally-isolated individual metal-material plug in the individual openings.