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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10665665 B1

PDFFull Text
Date of Patent:
May. 26, 2020

Filed:

Oct. 22, 2018

Passivation material for a pillar adjacent a trench

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Guangjun Yang, Meridian, ID (US);

Mohd Kamran Akhtar, Boise, ID (US);

Assignee:

Other;

Attorney:
Primary Examiner:

Richard A Booth

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/02118 (2013.01); H01L 21/02205 (2013.01); H01L 21/3065 (2013.01); H01L 21/31138 (2013.01); H01L 23/293 (2013.01); H01L 23/3171 (2013.01); H01L 27/1087 (2013.01); H01L 27/10829 (2013.01); H01L 21/67069 (2013.01);
Abstract

Systems, apparatuses, and methods related to passivation material for a pillar adjacent a trench are described. An example method includes forming a passivation material on a top region of a pillar adjacent a trench of a semiconductor device and removing a first portion of the passivation material to form, on a remaining second portion of the passivation material, a surface that is coplanar with an underlying sidewall of the pillar. The example method further includes removing a portion of a substrate material at a bottom region of the trench and removing the remaining second portion of the passivation material from the top region.

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