Fritz C Redeker

This inventor holds 73 USPTO granted patents and 15 published patent applications and 1 EPO patent, primarily in Semiconductor Processing (CPC class H01L). Top assignees: Lam Research Corporation, Applied Materials, Inc.. Active years: 1999-2016.

USPTO Granted Patents = 73 (Patent Applications = 15)

% Patents Active = 35.6

EPO Patents = 1

Average Co-Inventor Count = 4.5

ph-index = 11

Forward Citations = 638(Granted Patents)

Forward Citations (Not Self Cited) = 618(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Palo Alto, CA (US) (2010 - 2011)
Fremont, CA (US) (1999 - 2016)

Company Filing History:

67 out of 3,932

Lam Research Corporation

patents

6 out of 14,403

Applied Materials, Inc.

patents

Years Active: 1999-2016

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Areas of Expertise:

Atomic Layer Deposition

Wafer Electroless Plating

Dielectric Constant

Metallization Processes

Three Dimensional Integrated Circuits

Barrier Interface Preparation

Substrate Cleaning

Chemical Surface Treatment

Copper Deposition

Silicon Surface Engineering

Interconnect Structures

Fluid Handling Systems

73 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9359673 - Apparatus and method for atomic layer deposition (2016-06-07),

2. 9287110 - Method and apparatus for wafer electroless plating (2016-03-15),

3. 9117860 - Controlled ambient system for interface engineering (2015-08-25),

4. 9076844 - Process integration scheme to lower overall dielectric constant in BEoL interconnect structures (2015-07-07),

5. 9058975 - Cleaning solution formulations for substrates (2015-06-16),

6. 9006893 - Devices for metallization (2015-04-14),

7. 8970027 - Metallization mixtures and electronic devices (2015-03-03),

8. 8916232 - Method for barrier interface preparation of copper interconnect (2014-12-23),

9. 8844461 - Fluid handling system for wafer electroless plating and associated methods (2014-09-30),

10. 8771804 - Processes and systems for engineering a copper surface for selective metal deposition (2014-07-08),

11. 8747960 - Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide (2014-06-10),

12. 8691027 - Method for removing material from semiconductor wafer and apparatus for performing the same (2014-04-08),

13. 8673769 - Methods and apparatuses for three dimensional integrated circuits (2014-03-18),

14. 8623456 - Methods for atomic layer deposition (2014-01-07),

15. 8622020 - Simultaneous electroless plating of two substrates (2014-01-07),

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Title: The Innovative Work of Fritz C Redeker in Fremont, CA

Introduction:

Fritz C Redeker, a prolific inventor based in Fremont, CA, has made significant contributions to the field of technology with his inventive spirit and dedication to advancing various industries.

Latest Patents:

Among his 73 patents, two of the noteworthy inventions by Fritz C Redeker are the "Apparatus and Method for Atomic Layer Deposition" and the "Method and Apparatus for Wafer Electroless Plating." The former revolutionizes the process of depositing thin films using Atomic Layer Deposition (ALD) technology, while the latter enhances semiconductor wafer electroless plating processes.

Career Highlights:

Fritz C Redeker has showcased his expertise while working at prestigious companies such as Lam Research Corporation and Applied Materials, Inc., where he has been instrumental in driving innovation and pushing the boundaries of technology forward.

Collaborations:

Throughout his career, Fritz C Redeker has collaborated with esteemed professionals in the industry, including coworkers such as Yezdi N Dordi and John Boyd. Together, they have explored new frontiers and brought revolutionary ideas to life.

Conclusion:

In conclusion, Fritz C Redeker's groundbreaking inventions have left a lasting impact on the technological landscape, showcasing his brilliance and commitment to innovation. His work continues to inspire future generations of inventors and engineers to push the boundaries of what is possible in the world of technology.