The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Sep. 06, 2012
Hyungsuk Alexander Yoon, San Jose, CA (US);
Mikhail Korolik, San Jose, CA (US);
Fritz C. Redeker, Fremont, CA (US);
John M. Boyd, Woodlawn, OH (US);
Yezdi Dordi, Palo Alto, CA (US);
Hyungsuk Alexander Yoon, San Jose, CA (US);
Mikhail Korolik, San Jose, CA (US);
Fritz C. Redeker, Fremont, CA (US);
John M. Boyd, Woodlawn, OH (US);
Yezdi Dordi, Palo Alto, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.