logo

For the Inventor, By the Inventor

San Jose, CA, United States of America

Hyungsuk Alexander Yoon

This inventor holds 39 USPTO granted patents and 14 published patent applications, primarily in Ferroelectric Materials. Top assignees: Lam Research Corporation, Applied Materials, Inc., Korea Advanced Institute of Science and Technology. Active years: 2001-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyungsuk Alexander Yoon. Retrieved from https://idiyas.com/inventor/hyungsuk-alexander-yoon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 39 

% Patents Active = 51.3

Average Co-Inventor Count = 3.7

ph-index = 10

Forward Citations = 534(Granted Patents)


Location History:

  • Santa Clara, CA (US) (2001 - 2008)
  • Fremont, CA (US) (2010 - 2012)
  • San Jose, CA (US) (2004 - 2024)

Company Filing History:

goldMedal32 out of 3,953 
 
Lam Research Corporation
 patents
silverMedal7 out of 14,482 
 
Applied Materials, Inc.
 patents
bronzeMedal2 out of 2,792 
 
Korea Advanced Institute of Science and Technology
 patents
where one patent can have more than one assignee

Years Active: 2001-2024

Loading Chart...
Areas of Expertise:
Resistive Random Access Memory
Ferroelectric Properties
Hafnium Oxide
Atomic Layer Deposition
Interconnect Technologies
Copper Metallization
Porous Dielectric Material
Nanowire Devices
CVD Processes
Barrier Layers
Three Dimensional Integrated Circuits
Plasma Oxidation
39 patents (USPTO):Explore Patents
1. 12127486 - Resistive random access memory with preformed filaments (2024-10-22),
2. 11923404 - Modifying ferroelectric properties of hafnium oxide with hafnium nitride layers (2024-03-05),
3. 11923189 - Capping layer for a hafnium oxide-based ferroelectric material (2024-03-05),
4. 10535514 - Method of sealing open pores on surface of porous dielectric material using iCVD process (2020-01-14),
5. 9911660 - Methods for forming germanium and silicon germanium nanowire devices (2018-03-06),
6. 9472675 - [object Object] (2016-10-18),
7. 9359673 - Apparatus and method for atomic layer deposition (2016-06-07),
8. 9117860 - Controlled ambient system for interface engineering (2015-08-25),
9. 8926789 - Apparatus for the removal of a fluorinated polymer from a substrate (2015-01-06),
10. 8916232 - Method for barrier interface preparation of copper interconnect (2014-12-23),
11. 8883027 - Methods for removing a metal oxide from a substrate (2014-11-11),
12. 8673779 - Interconnect with self-formed barrier (2014-03-18),
13. 8673769 - Methods and apparatuses for three dimensional integrated circuits (2014-03-18),
14. 8623456 - Methods for atomic layer deposition (2014-01-07),
15. 8519461 - Device with post-contact back end of line through-hole via integration (2013-08-27),

Title: Hyungsuk Alexander Yoon: Pioneering Inventor from San Jose

Introduction: Hyungsuk Alexander Yoon is a renowned inventor based in San Jose, California, known for his groundbreaking contributions to various technological fields.

Latest Patents: Hyungsuk Alexander Yoon holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of innovative ideas.

Career Highlights: With a career spanning over two decades, Yoon has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized industries.

Collaborations: Yoon has collaborated with top engineers, scientists, and designers to bring his inventions to life, fostering a culture of innovation and creativity in every project he undertakes.

Conclusion: Hyungsuk Alexander Yoon's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…