The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Apr. 18, 2014
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Lam Research Corporation, Fremont, CA (US);
Byung Jin Cho, Daejeon, KR;
Jae Hoon Bong, Gwangju, KR;
Onejae Sul, Seoul, KR;
Hyungsuk Alexander Yoon, San Jose, CA (US);
Korea Advanced Institute of Science and Technology, Daejeon, KR;
Lam Research Corporation, Fremont, CA (US);
Abstract
This disclosure relates to a method of manufacturing n-doped graphene and an electrical component using ammonium fluoride (NHF), and to graphene and an electrical component thereby. An example method of manufacturing n-doped graphene includes (a) preparing graphene and ammonium fluoride (NHF); and (b) exposing the graphene to the ammonium fluoride (NHF), wherein through (b), a fluorine layer is formed on part or all of upper and lower surfaces of a graphene layer, and ammonium ions are physisorbed to part or all of the upper and lower surfaces of the graphene layer or defects between carbon atoms of the graphene layer, thereby maintaining or further improving superior electrical properties of graphene including charge mobility while performing n-doping of graphene.