The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2018
Filed:
Apr. 26, 2016
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Hyungsuk Alexander Yoon, San Jose, CA (US);
Zhongwei Zhu, Sunnyvale, CA (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823487 (2013.01); H01L 21/0228 (2013.01); H01L 21/0257 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02598 (2013.01); H01L 21/02603 (2013.01); H01L 21/28255 (2013.01); H01L 21/31055 (2013.01); H01L 21/31111 (2013.01); H01L 21/324 (2013.01); H01L 21/3212 (2013.01); H01L 29/0676 (2013.01);
Abstract
A method for forming nanowire semiconductor devices includes a) providing a substrate including an oxide layer defining vias; and b) depositing nanowires in the vias. The nanowires are made of a material selected from a group consisting of germanium or silicon germanium. The method further includes c) selectively etching back the oxide layer relative to the nanowires to expose upper portions of the nanowires; and d) doping the exposed upper portions of the nanowires using a dopant species.