The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Feb. 27, 2013
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Hyungsuk A. Yoon, San Jose, CA (US);
William T. Lee, Dublin, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of filling of vias and trenches in a dual damascene structure with a filling comprising copper or copper alloy is provided. An electroless deposition filling of the vias with a via filling comprising copper or copper alloy is provided. A trench barrier layer is formed over the via filling with a trench barrier layer comprising Mn or Al. The trench barrier layer is annealed at a temperature that causes a component of the trench barrier layer to pass into the via filling. The trenches are filled with a trench filling comprising copper or copper alloy.