The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Mar. 26, 2019
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Hyungsuk Alexander Yoon, San Jose, CA (US);
Zhongwei Zhu, Sunnyvale, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/28 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02181 (2013.01); C23C 16/40 (2013.01); C23C 16/45536 (2013.01); C23C 16/56 (2013.01); H01L 21/28185 (2013.01); H01L 21/31116 (2013.01);
Abstract
A method of forming ferroelectric hafnium oxide (HfO2) in a substrate processing system includes depositing an HfO2 layer on a substrate, depositing a capping layer on the HfO2 layer, annealing the HfO2 layer and the capping layer to form ferroelectric hafnium HfO2, and selectively etching the capping layer to remove the capping layer without removing the HfO2 layer.