Schenectady, NY, United States of America

Frank M Cerio, Jr

This inventor holds 21 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Tokyo Electron Limited, Tel Epion Corporation, Novellus Systems Incorporated. Active years: 2001-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Frank M Cerio, Jr. Retrieved from https://idiyas.com/inventor/frank-m-cerio-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 52.4

Average Co-Inventor Count = 1.9

ph-index = 9

Forward Citations = 285(Granted Patents)


Location History:

  • Phoenix, AZ (US) (2001 - 2011)
  • Schenectady, NY (US) (2008 - 2012)
  • Albany, NY (US) (2010 - 2012)

Company Filing History:


Years Active: 2001-2012

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Areas of Expertise:
Selective Deposition
Metal-Cap Layers
Atomic Layer Deposition
Ionized Physical Vapor Deposition
Copper Plating
Plasma Enhanced Deposition
Ruthenium Films
Surface Cleaning
Barrier Deposition
Dry-Filling Process
Tantalum-Nitride Deposition
High Aspect Ratio Features
21 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Frank M Cerio, Jr - Pioneering Inventor in Semiconductor Technology.

Introduction:

Frank M Cerio, Jr is a prolific inventor based in Schenectady, NY, with an impressive portfolio of 23 patents in the field of semiconductor devices. His groundbreaking work has significantly contributed to the advancement of metal-containing cap layers and in-situ dry cleaning processes for semiconductor applications.

Latest Patents:

1. Selective Deposition of Metal-Containing Cap Layers for Semiconductor Devices: This patent showcases Cerio's method for integrating metal-containing cap layers into copper metallization of semiconductor devices. By modifying dielectric layer surfaces and depositing metal-containing cap layers selectively, this innovation enhances the functionality and performance of semiconductor devices.

2. Hybrid In-Situ Dry Cleaning of Oxidized Surface Layers: Cerio's innovative approach involves activating oxidized surface layers through a two-step process using plasma-excited argon gas and non-plasma-excited hydrogen gas. This method effectively reduces the oxidized surface layer without altering the thickness of the metal-containing barrier layer, ensuring optimal device performance.

Career Highlights:

Throughout his career, Cerio has made significant contributions while working at prestigious companies such as Tokyo Electron Limited and Tel Epion Corporation. His expertise and innovative spirit have led to transformative developments in semiconductor technology, earning him recognition as a leader in the field.

Collaborations:

Cerio has collaborated with esteemed colleagues such as Bruce David Gittleman and Jacques Faguet, who have been instrumental in supporting and advancing his research efforts. Their combined expertise and dedication have resulted in groundbreaking innovations that continue to shape the semiconductor industry.

Conclusion:

Frank M Cerio, Jr's visionary work in semiconductor technology has had a profound impact on the field, with 23 patents reflecting his dedication to innovation and excellence. His pioneering inventions in metal-containing cap layers and in-situ dry cleaning processes highlight his unparalleled expertise and commitment to pushing the boundaries of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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