The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2010
Filed:
Mar. 20, 2006
Tadahiro Ishizaka, Watervliet, NY (US);
Frank M. Cerio, Jr., Schenectady, NY (US);
Jacques Faguet, Albany, NY (US);
Tadahiro Ishizaka, Watervliet, NY (US);
Frank M. Cerio, Jr., Schenectady, NY (US);
Jacques Faguet, Albany, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile