The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2010
Filed:
Jan. 24, 2008
Applicants:
Frank M. Cerio, Jr., Albany, NY (US);
Shigeru Mizuno, Delmar, NY (US);
Tsukasa Matsuda, Gyeonggi-do, KR;
Adam Selsey, Schenectady, NY (US);
Inventors:
Frank M. Cerio, Jr., Albany, NY (US);
Shigeru Mizuno, Delmar, NY (US);
Tsukasa Matsuda, Gyeonggi-do, KR;
Adam Selsey, Schenectady, NY (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang.