The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7642201 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 05, 2010

Filed:

Jan. 24, 2008
Applicants:

Frank M. Cerio, Jr., Albany, NY (US);

Shigeru Mizuno, Delmar, NY (US);

Tsukasa Matsuda, Gyeonggi-do, KR;

Adam Selsey, Schenectady, NY (US);

Inventors:

Frank M. Cerio, Jr., Albany, NY (US);

Shigeru Mizuno, Delmar, NY (US);

Tsukasa Matsuda, Gyeonggi-do, KR;

Adam Selsey, Schenectady, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang.


Find Patent Forward Citations

Cerio, Jr., Frank. (2010). Sequential tantalum-nitride deposition (U.S. Patent No. 7642201). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7642201

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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